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| EFA240D-CP083 UPDATED 06/13/2006 Low Distortion GaAs Power FET .2900.005 .096 .010 MAX 2X .065 .015 .075 .220 .200 .050 .160 FEATURES * * * * * * NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +30.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY .0080.001 All Dimensions in Inches ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH* PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz 2.0 GHz Caution! ESD sensitive device. MIN 29.0 15.5 TYP 30.5 30.5 17.0 12.0 40 400 280 680 360 -2.0 -13 -7 -15 -14 25 30 o MAX UNITS dBm dB % VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 6 mA IGD = 2.4 mA IGS = 2.4 mA 880 mA mS -3.5 V V V C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10V -5V 10.8 mA -1.8 mA 27 dBm 175oC -65/175oC 5.0W CONTINUOUS2 8V -4V 3.6 mA -0.6 mA @ 3dB Compression 175oC -65/175oC 5.0W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006 |
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